Semiconductor package having discrete antenna device

ABSTRACT

One embodiment of the present disclosure provides a semiconductor package including a bottom chip package having a first side and a second side opposing the first side, and a top antenna package mounted on the first side of the bottom chip package. The bottom chip package further includes a semiconductor chip. The semiconductor chip may include a RFIC chip. The top antenna package has at least one radiative antenna element.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims priority from U.S. provisional application No.62/516,150 filed Jun. 7, 2017, U.S. provisional application No.62/579,947 filed Nov. 1, 2017, and U.S. provisional application No.62/584,155 filed Nov. 10, 2017, the subject matter of which is herebyincorporated by reference.

BACKGROUND

This disclosure relates generally to the field of semiconductorpackaging and, more particularly, to a semiconductor package including adiscrete antenna device.

As known in the art, shorter interconnect between chips and antennas ismore and more critical in millimeter-wave (mmW) applications. To achieveshorter interconnect between chips and antennas, as well as smallervolume and higher integration of semiconductor packages, Antenna inPackage (AiP) that consists of integrated circuit (IC) chips andantenna(s) inside a package has been developed in the field ofsemiconductor chip packaging.

Unfortunately, demands on the substrate layers are quite differentbetween the antennas and the routing design. Typically, it is requiredto employ thin build-up layers in the substrate layers so as to enablethin vias and dense interconnects. However, this requirement conflictswith the requirements for antenna design, which typically needs thick,almost evenly spaced substrate layers.

SUMMARY

The main object of the present invention is to provide an improvedsemiconductor package to overcome the deficiencies and disadvantages ofthe prior art.

One embodiment of the present disclosure provides a semiconductorpackage including a bottom chip package having a first side and a secondside opposing the first side, and a top antenna package mounted on thefirst side of the bottom chip package. The bottom chip package furtherincludes a semiconductor chip. The semiconductor chip may include a RFICchip, a base-band IC chip or a System-in-Chip (SOC) die. The top antennapackage has at least one radiative antenna element.

According to one embodiment, the bottom chip package may include apackage substrate having a core with at least one plated through-hole,and at least one build-up layer. The build-up layer may include at leastone via and conductive traces therein to route signals, ground, and/orpower throughout the bottom chip package. The conductive traces on abottom surface of the build-up layer may be in the form of pads ontowhich the semiconductor chip is attached with conductive elements. Thecore may include epoxy laminates of fiberglass sheets, prepreg, FR-4materials, FR-5 materials, or combinations thereof.

According to one embodiment, the top antenna package may include asubstrate. The substrate may include a ceramic substrate, asemiconductor substrate, a dielectric substrate, or a glass substrate.The substrate may include at least one plated through-hole to routesignals from one side of the substrate to the other side of thesubstrate. The radiative antenna element is disposed on a surface of thesubstrate. The top antenna package may be a low temperature co-firedceramic (LTCC), a flip-chip chip-scale-package (FCCSP) or a fan-out typechip package.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention. In the drawings:

FIG. 1 is a schematic, cross-sectional diagram showing an exemplarysemiconductor package 1 a including a discrete antenna device mounted ona bottom chip package according to one embodiment of the invention;

FIGS. 2-9 show some exemplary variants of the semiconductor package asdepicted in FIG. 1 according to various embodiments of the invention;

FIGS. 10-13 are schematic, cross-sectional diagram showing exemplary topantenna packages according to other embodiments of the invention; and

FIG. 14 illustrates an exemplary fan-out type chip package for the topantenna package.

DETAILED DESCRIPTION

In the following detailed description of the invention, reference ismade to the accompanying drawings which forma part hereof, and in whichis shown, by way of illustration, specific embodiments in which theinvention may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice theinvention. Other embodiments may be utilized and structural, logical,and electrical changes may be made without departing from the scope ofthe present invention.

The terms “die”, “chip”, “semiconductor chip”, and “semiconductor die”are used interchangeable throughout the specification to mean integratedcircuit chip or die. The term “horizontal” as used herein may be definedas a direction parallel to a plane or surface (e.g., surface of asubstrate), regardless of its orientation. The term “vertical,” as usedherein, may refer to a direction orthogonal to the horizontal directionas just described. Terms, such as “on,” “above,” “below,” “bottom,”“top,” “side” (as in “sidewall”), “higher,” “lower,” “upper,” “over,”and “under,” may be referenced with respect to the horizontal plane.

The present disclosure pertains to a semiconductor package including atleast one discrete antenna device (or top antenna package) mounted on abottom semiconductor chip package (or bottom chip package), therebyforming an antenna package-on-package structure. The exemplarysemiconductor packages disclosed in various embodiments herein providethe advantages including, but not limited to, lower package cost,shorter lead-time, and/or better design flexibility over theconventional antenna in packages. According to some embodiments of thedisclosure

FIG. 1 is a schematic, cross-sectional diagram showing an exemplarysemiconductor package 1 a including a discrete antenna device mounted ona bottom chip package according to one embodiment of the invention.According to one embodiment, the semiconductor package may be a wirelessmodule and the discrete antenna device may be an antenna package. Asshown in FIG. 1, the semiconductor package 1 a comprises a bottom chippackage 10 and a top antenna package 20 mounted on the bottom chippackage 10. The bottom chip package 10 has a first side 10 a and asecond side 10 b that is opposite to the first side 10 a. The topantenna package 20 may be mounted on the first side 10 a. The bottomchip package 10 may comprise a semiconductor chip (or semiconductor die)30 mounted on the second side 10 b. For example, the semiconductor chip30 may be a RFIC chip, a base-band IC chip, a System-in-Chip (SOC) die,but is not limited thereto.

According to one embodiment, the bottom chip package 10 may comprise apackage substrate 100 having a core 110 with one or more platedthrough-holes 112, and one or more build-up layers 120. The build-uplayers 120 may have one or more vias 122 and/or conductive traces 114formed therein to route signals, ground, and/or power throughout thebottom chip package 10. Conductive traces 124 on a bottom surface of thebottom build-up layer 120 may be in the form of one or more pads ontowhich the semiconductor chip 30 may be attached with conductive elements312. For example, the conductive elements 312 may comprise solder balls,solder bumps, copper bumps, gold bumps, or any suitable conductive meansknown in the art.

For example, the core 110 may include any suitable material comprisingepoxy laminates of fiberglass sheets, prepreg, FR-4 materials, FR-5materials, or combinations thereof. The conductive traces 114, 124, theplated through-holes 112, and the vias 122 may include any suitableconductive materials comprising copper, silver, gold, nickel, orcombinations thereof. The build-up layers 120 may include any suitabledielectric materials comprising polyimide, prepreg, polymers, or thelike.

According to one embodiment, the bottom chip package 10 may furthercomprise solder mask layers 130 on the first side 10 a and the secondside 10 b. For interconnection purposes, the solder mask layers 130 maycomprise openings for exposing the corresponding pads in the conductivetraces 124. According to one embodiment, an array of conductive elements140 may be disposed on the second side 10 b of the bottom chip package10 for further interconnection to a printed circuit board or a mainboard.

The top antenna package 20 is electrically coupled to the bottom chippackage 10 through conductive elements 240, which are coupled to thetraces 124 on the top surface of the top build-up layer 120 in the formof one or more pads and to the traces 214 on the bottom surface of thesubstrate 210 in the form of one or more pads. For example, theconductive elements 240 may comprise solder balls, solder bumps, copperbumps, gold bumps, or any suitable conductive means known in the art.The top antenna package 20 may comprise a substrate 210. The substrate210 may comprise one or more plated through-holes 212 to route signalsfrom one side of the substrate 210 to the other side of the substrate210.

For example, the substrate 210 may be a ceramic substrate, asemiconductor substrate, a dielectric substrate, a glass substrate, butis not limited thereto. According to embodiments of the invention, thetop antenna package 20 may be a low temperature co-fired ceramic (LTCC),a flip-chip chip-scale-package (FCCSP), a fan-out type chip package, alaminate-based package or a wire-bond type package and not limited.

According to one embodiment, the top antenna package 20 does not includea semiconductor chip or die. The top antenna package 20 may furthercomprise a radiative antenna element 220 in the conductive trace 214disposed on a surface of the substrate 210. The radiative antennaelement 220 may comprise an antenna array or a mechanism for radiatingand/or receiving electro-magnetic signals such as RF wireless signals ormillimeter-wave (mmW) signals. Although not shown in this figure, it isunderstood that the radiative antenna element 220 may be disposed at abottom surface of the substrate 210 depending upon the designrequirements. For example, the radiative antenna element 220 may be maybe of any suitable type, such as patch antennas, slot-coupled antenna,stacked patches, dipoles, monopoles, etc., and may have differentorientations and/or polarizations. In some embodiments, the radiativeantenna element 220 could rout signals from one side of the substrate210 to the other side of the substrate 210 through one or more platedthrough-holes 212 or other conductive traces disposed within thesubstrate 210.

Besides, the radiative antenna element 220 could comprise multipleantenna modules, for example, a dual-band antenna element and asingle-band antenna element, and not limited.

FIGS. 2-9 show some exemplary variants of the semiconductor package asdepicted in FIG. 1 according to various embodiments of the invention,wherein like numeral numbers designate like layers, regions, orelements. It is to be understood that the features of the variousexemplary embodiments described herein may be combined with each other,unless specifically noted otherwise.

As shown in FIG. 2, the difference between the semiconductor package 1 band the semiconductor package 1 a is that the semiconductor chip 30 ofthe semiconductor package 1 b is disposed on the same side as the topantenna package 20. For example, the semiconductor chip 30 and the topantenna package 20 are both mounted on the first side 10 a of the bottomchip package 10. Likewise, the semiconductor chip 30 may be attachedwith the corresponding pads in the conductive trace 124 through theconductive elements 312. Although not shown in the figures, it is to beunderstood that an underfill layer may be disposed between thesemiconductor chip 30 and the first side 10 a of the bottom chip package10. In a non-liming example, the semiconductor chip 30 may be mounteddirectly under the top antenna package 20.

As shown in FIG. 3, and briefly to FIG. 2, the difference between thesemiconductor package 1 c and the semiconductor package 1 b is that thesemiconductor package 1 c further comprises a molding compound 410between the top antenna package 20 and the bottom chip package 10.According to one embodiment, the molding compound 410 may comprise epoxyor polymers, but is not limited thereto. The molding compound 410 maycover and encapsulate the semiconductor chip 30. According to oneembodiment, the molding compound 410 may fill into the gap between thesemiconductor chip 30 and the first side 10 a of the bottom chip package10. According to one embodiment, the molding compound 410 may comprisethrough mold vias 410 a. The conductive elements 240 may be disposedwithin the through mold vias 410 a, respectively.

As shown in FIG. 4, and briefly to FIG. 2, the difference between thesemiconductor package 1 d and the semiconductor package 1 b is that thesemiconductor chip 30 of the semiconductor package 1 d is embedded inthe core 110 of the package substrate 100. It is understood that thesemiconductor chip 30 may be directly embedded in the build-up layers120. For example, the semiconductor chip 30 may be mounted on the core110 of the package substrate 100 and embedded inside a film ofdielectric layer. In another embodiment, a cavity (not shown) may beformed in the package substrate 100 and the semiconductor chip 30 isplaced inside this cavity. The semiconductor chip 30 may be bonded byconventional bonding techniques.

As shown in FIG. 5, the semiconductor package 1 e comprises multiplesemiconductor dies, for example, a semiconductor chip 30 a and asemiconductor chip 30 b, which may be disposed on the first side 10 aand the second side 10 b of the bottom chip package 10, respectively.The semiconductor chip 30 a may be electrically connected to the packagesubstrate 100 through the conductive elements 312 a. The semiconductorchip 30 b may be electrically connected to the package substrate 100through the conductive elements 312 b.

As shown in FIG. 6, the semiconductor package if comprises multiplesemiconductor dies, for example, a semiconductor chip 30 a and asemiconductor chip 30 b. The semiconductor chip 30 a may be disposed onthe first side 10 a of the bottom chip package 10. The semiconductorchip 30 b may be embedded in the package substrate 100.

As shown in FIG. 7, likewise, the semiconductor package 1 g comprises abottom chip package 10 and the top antenna package 20 mounted on thefirst side 10 a of the bottom chip package 10. According to theillustrated embodiment, the top antenna package 20 may be larger in sizethan the bottom chip package 10.

As shown in FIG. 8, the semiconductor package 1 h comprises a bottomchip package 10 and multiple top antenna packages, for example, topantenna package 20 a and top antenna package 20 b, mounted on the firstside 10 a of the bottom chip package 10. The semiconductor chip 30 maybe mounted on the second side 10 b of the bottom chip package 10.According to the illustrated embodiment, the top antenna packages 20 aand 20 b may be smaller in size than the bottom chip package 10.According to another embodiment, the top antenna packages 20 a and 20 bmay be larger in size than the bottom chip package 10.

As shown in FIG. 9, the semiconductor package 1 i comprises a bottomchip package 10 and a top antenna package 20 mounted on the first side10 a of the bottom chip package 10. The top antenna package 20 maycomprise a radiative antenna element 220 in the conductive trace 214disposed on a surface of the substrate 210. The radiative antennaelement 220 may comprise an antenna array or a mechanism for radiatingand/or receiving electro-magnetic signals such as RF wireless signals ormillimeter-wave mmW signals.

The semiconductor package 1 i may further comprise a radiative antennaelement 520 in the conductive trace 124 disposed on the first side 10 aof the bottom chip package 10. The radiative antenna element 520 doesnot overlap with the radiative antenna element 220. In a non-limitingexample, the radiative antenna element 220 may be a dual-band antennaelement, and the radiative antenna element 520 may be a single-bandantenna element.

It is advantageous to use the present disclosure because by forming thetop antenna package 20 separately from the bottom chip package 10, lowerpackage cost, shorter lead-time, and better design flexibility may beachieved. The top antenna package 20 and the bottom chip package 10 maybe manufactured with materials, structure, and/or processes that may berelatively optimal for the semiconductor package. For example, thebottom chip package 10 may be manufactured with multi-layer interconnect(e.g., multiple build-up layers on either side of the core 110) toaccommodate dense routing. The top antenna package 20, on the otherhand, in this example, may only have a single layer (e.g., a strip ofdielectric with pad interfaces on one side and radiating elements on theother side). In non-limiting examples, a low-k dielectric may be used inthe bottom chip package 10 to route signals with reduced parasitics(e.g., reduced resistive-capacitive (RC) delays), while relativelyhigher-k materials may be employed in the top antenna package 20 toenable reduced form factor antennas.

FIGS. 10-13 are schematic, cross-sectional diagram showing someexemplary packages, for example, top antenna packages, according toother embodiments of the invention, wherein like numeral numbersdesignate like layers, regions, or elements. It is to be understood thatthe features of the various exemplary embodiments described herein maybe combined with each other, unless specifically noted otherwise. Forthe sake of simplicity, only germane portions of the exemplary topantenna packages are shown in the figures.

It is to be understood that the structures or features as depicted inFIGS. 10-13 are not limited to the top antenna packages. It is to beunderstood that the structures or features as depicted in FIGS. 10-13may be employed in the bottom chip packages 10 as set forth in previousfigures. It is also appreciated that some features depicted in onefigure of FIGS. 10-13 may be combined with other features in anotherfigure of FIGS. 10-13 without departing the spirit and scope of theinvention.

As shown in FIG. 10, the top antenna package 2 a comprises a substrate210. For example, the substrate 210 may be a ceramic substrate, asemiconductor substrate, a dielectric substrate, a glass substrate, butis not limited thereto. Conductive traces 214 are formed on oppositesurfaces of the substrate 210. The substrate 210 may comprise one ormore plated through-holes 212 to route signals from one side of thesubstrate 210 to the other side of the substrate 210. According toembodiments of the invention, for example, the top antenna package 2 amay be a package with a chip or an electronic element. On one surface ofthe substrate 210, for example, a bottom surface of the substrate 210, are-wiring layer 300 may be disposed on the bottom surface of thesubstrate 210.

In a non-limiting example, the re-wiring layer 300 may comprise adielectric layer 320 laminated on the bottom surface of the substrate210, a conductor layer 340 on the dielectric layer 320, and a protectivelayer 360 on the conductor layer 340. The dielectric layer 320 maycomprise any suitable insulating layers such as silicon oxide, siliconnitride, polyimide or the like. The conductor layer 340 may comprisecopper, but is not limited thereto. The protective layer 360 maycomprise any suitable passivation layers or solder masks. The conductorlayer 340 may be electrically connected to the conductive trace 214through the vias 322 in the dielectric layer 320. In a non-limitingexample, a semiconductor chip 40 may be mounted on the re-wiring layer300. The semiconductor chip 40 may be electrically connected to theconductor layer 340 through the contact elements 342 and the conductiveelements 412. In some other example, the semiconductor chip 40 could beomitted.

A radiative antenna element 220 may be disposed in the conductive trace214 on a surface of the substrate 210, for example, the top surface ofthe substrate 210. The radiative antenna element 220 may comprise anantenna array or a mechanism for radiating and/or receivingelectro-magnetic signals such as RF wireless signals or mmW signals.Although not shown in this figure, it is understood that the radiativeantenna element 220 may be disposed at a bottom surface of the substrate210 depending upon the design requirements. For example, the radiativeantenna element 220 may be may be of any suitable type, such as patchantennas, stacked patches, dipoles, monopoles, etc., and may havedifferent orientations and/or polarizations.

As shown in FIG. 11, likewise, the top antenna package 2 b comprises acore or a substrate 210. For example, the substrate 210 may be a ceramicsubstrate, a semiconductor substrate, a dielectric substrate, a glasssubstrate, but is not limited thereto. Dielectric layers 520 andconductive traces 214, 224 are formed on opposite surfaces of thesubstrate 210. A protective layer 560 may be disposed to cover theconductive trace 224 and the dielectric layers 520. The dielectric layer520 may comprise any suitable insulating layers such as silicon oxide,silicon nitride, polyimide or the like. The protective layer 560 maycomprise any suitable passivation layers or solder masks. The substrate210 may comprise one or more plated through-holes 212 to route signalsfrom one side of the substrate 210 to the other side of the substrate210.

According to embodiments of the invention, for example, the top antennapackage 2 b may be an embedded-chip package, which is a package embeddedwith a semiconductor chip 40. In a non-limiting example, thesemiconductor chip 40 may embedded in the substrate 210. Thesemiconductor chip 40 may be electrically connected to the conductivetrace 214 through the contact elements 422. In some other example, thesemiconductor chip 40 could be omitted.

A radiative antenna element 220 may be disposed in the conductive trace224 disposed on the substrate 210, for example, on the top surface ofthe substrate 210. The radiative antenna element 220 may comprise anantenna array or a mechanism for radiating and/or receivingelectro-magnetic signals such as RF wireless signals or mmW signals.Although not shown in this figure, it is understood that the radiativeantenna element 220 may be disposed at a bottom surface of the substrate210 depending upon the design requirements. For example, the radiativeantenna element 220 may be may be of any suitable type, such as patchantennas, stacked patches, dipoles, monopoles, etc., and may havedifferent orientations and/or polarizations.

As shown in FIG. 12, the top antenna package 2 c may be a fan-out typechip package, wherein at least some of the package pads and/orconducting lines connecting the chip to the package pads are locatedlaterally outside of the outline of the chip or do at least intersectthe outline of the chip. Furthermore, the top antenna package 2 c couldbe a wafer level chip scale package (WLCSP). In a non-limiting example,the top antenna package 2 c may comprise a chip 40 encapsulated by afirst molding compound 61. The first molding compound 61 may cover theinactive bottom surface and four sidewall surfaces of the chip 40 andmay expose an active surface of the chip 40. On the active surface ofthe chip 40, a plurality of bonding pads or input/output (I/O) pads 402are arranged. In some other example, the semiconductor chip 40 could beomitted.

A re-distribution layer (RDL) structure 600 may be disposed on theactive surface of the chip 40 and on a surface of the first moldingcompound 61 and may be electrically connected to the I/O pads 402 of thechip 40. In a non-limiting example, the RDL structure 600 may comprisedielectric layers 601, 603, and 605, and conductor layers 602, 604 inthe dielectric layers 601, 603, and 605. At least one conductive element640 such as a solder bump, a solder ball, or a metal bump/pillar may beformed on the dielectric layer 605 for further connection. Thedielectric layers 601, 603, and 605 may comprise any suitable insulatinglayers such as silicon oxide, silicon nitride, polyimide or the like.The conductor layers 602, 604 may comprise copper, but is not limitedthereto.

In a non-limiting example, the top antenna package 2 c may comprise aconductive trace 614 on the first molding compound 61, a second moldingcompound 62 on the first molding compound 61 and on the conductive trace614, a conductive trace 624 on the second molding compound 62, a thirdmolding compound 63 on the second molding compound 62 and on theconductive trace 624, and a conductive trace 634 on the third moldingcompound 63. Through mold vias 612 may be disposed in the first moldingcompound 61 for the signal transmission between the RDL structure 600and the conductive traces 614, 624 and 634.

Radiative antenna elements 620 may be disposed in the conductive traces624, 634. The radiative antenna element 620 may comprise an antennaarray or a mechanism for radiating and/or receiving electro-magneticsignals such as RF wireless signals or mmW signals. Although not shownin this figure, it is understood that the radiative antenna elements 620may be disposed in any layers of the conductive traces 614, 624 and 634depending upon the design requirements. For example, the radiativeantenna element 620 may be may be of any suitable type, such as patchantennas, stacked patches, dipoles, monopoles, etc., and may havedifferent orientations and/or polarizations.

As shown in FIG. 13, the top antenna package 2 d may have a similarstack structure as that depicted in FIG. 12. The difference between thetop antenna package 2 d and the top antenna package 2 c depicted in FIG.12 is that the semiconductor chip 40 of the top antenna package 2 d isexternally mounted on the RDL structure 600. Likewise, radiative antennaelements 620 may be disposed in the conductive traces 624, 634. Theradiative antenna element 620 may comprise an antenna array or amechanism for radiating and/or receiving electro-magnetic signals suchas RF wireless signals or mmW signals. Although not shown in thisfigure, it is understood that the radiative antenna elements 620 may bedisposed in any layers of the conductive traces 614, 624 and 634depending upon the design requirements. For example, the radiativeantenna element 620 may be may be of any suitable type, such as patchantennas, stacked patches, dipoles, monopoles, etc., and may havedifferent orientations and/or polarizations. In some other example, thesemiconductor chip 40 could be omitted.

For example, FIG. 14 illustrates an exemplary fan-out type chip package2 e for the top antenna package. As shown in FIG. 14, the fan-out typechip package 2 e is a package embedded with a semiconductor chip 40,wherein at least some of the package pads 724 and/or conducting lines714 connecting the semiconductor chip 40 to the package pads 724 arelocated laterally outside of the outline of the semiconductor chip 40 ordo at least intersect the outline of the semiconductor chip 40. Thefan-out type chip package 2 e may comprise a molding compound 710encapsulating the sidewalls and a non-active upper surface of the chip40. The active surface of the semiconductor chip 40 is not covered withthe molding compound 710. The input/output (I/O) pads 402 on the activesurface of the semiconductor chip 40 are electrically connected to there-distribution layer (RDL) structure 700 constructed on the activesurface of the semiconductor chip 40 and on the lower surface of themolding compound 710. The RDL structure 700 comprises at least onedielectric layer 720, the conducting lines 714 in the at least onedielectric layer 720 for connecting the I/O pads 402 of thesemiconductor chip 40 to the package pads 724, and at least a radiativeantenna element 722 in or on the at least one dielectric layer 720. Theconductive elements 240 such as bumps or solder balls may be disposed onthe package pads 724 for further connections. In some other example, thesemiconductor chip 40 could be omitted.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

1-23. (canceled)
 24. A semiconductor package, comprising: a bottom chippackage having a first side and a second side opposing the first side,the bottom chip package including a semiconductor chip; a discreteantenna device mounted on the first side of the bottom chip package andhaving a first radiative antenna element; and conductive elementsbetween the discrete antenna device and the bottom chip package toelectrically interconnect the bottom chip package and the discreteantenna device.
 25. The semiconductor package according to claim 24,wherein the semiconductor chip comprises a RFIC chip.
 26. Thesemiconductor package according to claim 24, wherein the bottom chippackage comprises a package substrate having a core with at least oneplated through-hole, and at least one build-up layer.
 27. Thesemiconductor package according to claim 26, wherein the at least onebuild-up layer comprises at least one via and conductive traces thereinto route signals, ground, and/or power throughout the bottom chippackage.
 28. The semiconductor package according to claim 27, whereinconductive traces on a bottom surface of the at least one build-up layercomprise pads onto which the semiconductor chip is attached withconductive elements.
 29. The semiconductor package according to claim26, wherein the core comprises epoxy laminates of fiberglass sheets,prepreg, FR-4 materials, FR-5 materials, or combinations thereof. 30.The semiconductor package according to claim 24, wherein the discreteantenna device comprises a plurality of antenna modules.
 31. Asemiconductor device, comprising: a top antenna package comprising asubstrate and a radiative antenna element, wherein a re-wiring layer isdisposed on a first surface of the substrate; a semiconductor diemounted on the re-wiring layer of the substrate; and contact elementsbetween the substrate and the semiconductor die to electricallyinterconnect to the semiconductor die and the radiative antenna element.32. The semiconductor device according to claim 31, wherein thesubstrate comprises a ceramic substrate, a semiconductor substrate, adielectric substrate, or a glass substrate.
 33. The semiconductor deviceaccording to claim 31, wherein the substrate comprises at least oneplated through-hole to route signals from one side of the substrate tothe other side of the substrate.
 34. The semiconductor device accordingto claim 31, wherein the radiative antenna element is disposed on asecond surface of the substrate.
 35. The semiconductor device accordingto claim 31, wherein the top antenna package is a low temperatureco-fired ceramic (LTCC), a flip-chip chip-scale-package (FCCSP), alaminate-based package, wire-bond type package or a fan-out type chippackage.
 36. The semiconductor device according to claim 31, wherein amolding compound is disposed on the top antenna package, wherein themolding compound covers and encapsulates the semiconductor die.
 37. Thesemiconductor device according to claim 31, wherein anothersemiconductor die is mounted on the substrate.
 38. A semiconductorpackage, comprising: a bottom chip package having a first side and asecond side opposing the first side, the bottom chip package furtherincluding a semiconductor chip; a first top antenna package mounted onthe first side of the bottom chip package and having a first radiativeantenna element; conductive elements between the first top antennapackage and the bottom chip package to electrically interconnect thebottom chip package and the first top antenna package; and a second topantenna package mounted on the first side of the bottom chip package.39. The semiconductor package according to claim 38, wherein the secondtop antenna package has a second radiative antenna element.
 40. Thesemiconductor package according to claim 39, wherein the first radiativeantenna element is a dual-band antenna element and the second radiativeantenna element is a single-band antenna element.